IPP045N10N3G

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Manufacturer Product Number

IPP045N10N3G

Description

POWER FIELD-EFFECT TRANSISTOR, 1

Datasheet

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Product Attributes

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Model SeriesOptiMOS™ 3
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C137A (Tc)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)6V, 10V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage4.5mOhm @ 100A, 10V
Maximum Gate Threshold Voltage at Drain Current3.5V @ 150µA
Maximum Gate Charge (Qg) @ Vgs117 nC @ 10 V
Maximum Gate-Source Voltage±20V
Maximum Input Capacitance (Ciss) at Vds8410 pF @ 50 V
Maximum Power Dissipation214W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3-1
Package / CaseTO-220-3
$0.98

In-Stock: 131979

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