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Manufacturer
Infineon TechnologiesManufacturer Product Number
IPP045N10N3G
Description
POWER FIELD-EFFECT TRANSISTOR, 1
Datasheet
noDatasheetProduct Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Model Series | OptiMOS™ 3 | |
| Package | Bulk | |
| Part Status | Active | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 100 V | |
| Current - Continuous Drain (Id) @ 25°C | 137A (Tc) | |
| Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On) | 6V, 10V | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 4.5mOhm @ 100A, 10V | |
| Maximum Gate Threshold Voltage at Drain Current | 3.5V @ 150µA | |
| Maximum Gate Charge (Qg) @ Vgs | 117 nC @ 10 V | |
| Maximum Gate-Source Voltage | ±20V | |
| Maximum Input Capacitance (Ciss) at Vds | 8410 pF @ 50 V | |
| Maximum Power Dissipation | 214W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | PG-TO220-3-1 | |
| Package / Case | TO-220-3 |
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