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Manufacturer
Infineon TechnologiesManufacturer Product Number
BSS670S2L
Description
MOSFET N-CH 55V 540MA SOT23-3
Datasheet
BSS670S2L Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Model Series | OptiMOS™ | |
| Package | Tape & Reel (TR) | |
| Part Status | Obsolete | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 55 V | |
| Current - Continuous Drain (Id) @ 25°C | 540mA (Ta) | |
| Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On) | 4.5V, 10V | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 650mOhm @ 270mA, 10V | |
| Maximum Gate Threshold Voltage at Drain Current | 2V @ 2.7µA | |
| Maximum Gate Charge (Qg) @ Vgs | 2.26 nC @ 10 V | |
| Maximum Gate-Source Voltage | ±20V | |
| Maximum Input Capacitance (Ciss) at Vds | 75 pF @ 25 V | |
| Maximum Power Dissipation | 360mW (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | PG-SOT23 | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
$0.04
In-Stock: 72974
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