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Manufacturer
Infineon TechnologiesManufacturer Product Number
BC857BWE6327
Description
BIPOLAR GEN PURPOSE TRANSISTOR
Datasheet
BC857BWE6327 Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Package | Bulk | |
| Part Status | Active | |
| Transistor Type | PNP | |
| Collector Current (Ic) (Max) | 100 mA | |
| Maximum Collector-Emitter Breakdown Voltage | 45 V | |
| Maximum Collector-Emitter Saturation Voltage at Base Current and Collector Current | 650mV @ 5mA, 100mA | |
| Current - Collector Cutoff (Max) | 15nA (ICBO) | |
| DC Current Gain (hFE) Minimum @ Ic, Vce | 220 @ 2mA, 5V | |
| Maximum Power | 250 mW | |
| Frequency - Transition | 250MHz | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | SC-70, SOT-323 | |
| Supplier Device Package | PG-SOT323 |
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