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Manufacturer
Fairchild SemiconductorManufacturer Product Number
FGB20N60SF
Description
INSULATED GATE BIPOLAR TRANSISTO
Datasheet
FGB20N60SF Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Package | Bulk | |
| Part Status | Active | |
| IGBT Type | Field Stop | |
| Maximum Collector-Emitter Breakdown Voltage | 600 V | |
| Collector Current (Ic) (Max) | 40 A | |
| Current - Collector Pulsed (Icm) | 60 A | |
| Maximum Collector-Emitter On-State Voltage at Gate-Emitter Voltage and Collector Current | 2.8V @ 15V, 20A | |
| Maximum Power | 208 W | |
| Switching Energy | 370µJ (on), 160µJ (off) | |
| Input Type | Standard | |
| Gate Charge | 65 nC | |
| Delay Time On/Off at 25°C | 13ns/90ns | |
| Test Condition | 400V, 20A, 10Ohm, 15V | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| Supplier Device Package | D2PAK (TO-263) |
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