
Image shown is a representation only. Exactspecifications should be obtained from the productdata sheet.
Manufacturer
Fairchild SemiconductorManufacturer Product Number
FGA50S110P
Description
INSULATED GATE BIPOLAR TRANSISTO
Datasheet
FGA50S110P Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Package | Bulk | |
| Part Status | Active | |
| IGBT Type | Trench Field Stop | |
| Maximum Collector-Emitter Breakdown Voltage | 1100 V | |
| Collector Current (Ic) (Max) | 50 A | |
| Current - Collector Pulsed (Icm) | 120 A | |
| Maximum Collector-Emitter On-State Voltage at Gate-Emitter Voltage and Collector Current | 2.6V @ 15V, 50A | |
| Maximum Power | 300 W | |
| Input Type | Standard | |
| Gate Charge | 195 nC | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Package / Case | TO-3P-3, SC-65-3 | |
| Supplier Device Package | TO-3PN |
$1.89
In-Stock: 60
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