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Manufacturer
Fairchild SemiconductorManufacturer Product Number
FDPF8N50NZU
Description
POWER FIELD-EFFECT TRANSISTOR, 6
Datasheet
FDPF8N50NZU Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Model Series | UniFET-II™ | |
| Package | Bulk | |
| Part Status | Active | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 500 V | |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Tc) | |
| Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On) | 10V | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 1.2Ohm @ 4A, 10V | |
| Maximum Gate Threshold Voltage at Drain Current | 5V @ 250µA | |
| Maximum Gate Charge (Qg) @ Vgs | 18 nC @ 10 V | |
| Maximum Gate-Source Voltage | ±25V | |
| Maximum Input Capacitance (Ciss) at Vds | 735 pF @ 25 V | |
| Maximum Power Dissipation | 40W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-220F-3 | |
| Package / Case | TO-220-3 Full Pack |
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