FDMS3669S

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Manufacturer Product Number

FDMS3669S

Description

MOSFET 2N-CH 30V 13A/24A 8PQFN

Product Attributes

TYPEDescriptionSELECT ALL
Model SeriesPowerTrench®
PackageBulk
Part StatusActive
TechnologyMOSFET (Metal Oxide)
FET FeatureLogic Level Gate
Configuration2 N-Channel (Dual) Asymmetrical
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C13A (Ta), 24A (Tc), 18A (Ta), 60A (Tc)
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage10mOhm @ 13A, 10V, 5mOhm @ 18A, 10V
Maximum Gate Threshold Voltage at Drain Current2.7V @ 250µA, 2.5V @ 1mA
Maximum Gate Charge (Qg) @ Vgs24nC @ 10V, 34nC @ 10V
Maximum Input Capacitance (Ciss) at Vds1605pF @ 15V, 2060pF @ 15V
Maximum Power1W (Ta), 2.2W (Tc), 1W (Ta), 2.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-PowerTDFN
Supplier Device Package8-PQFN (5x6)
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