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Manufacturer
Fairchild SemiconductorManufacturer Product Number
FDC653N
Description
SMALL SIGNAL FIELD-EFFECT TRANSI
Datasheet
FDC653N Datasheet(pdf)Product Attributes
| TYPE | Description | SELECT ALL |
|---|---|---|
| Package | Bulk | |
| Part Status | Active | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 30 V | |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) | |
| Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On) | 4.5V, 10V | |
| Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage | 35mOhm @ 5A, 10V | |
| Maximum Gate Threshold Voltage at Drain Current | 2V @ 250µA | |
| Maximum Gate Charge (Qg) @ Vgs | 17 nC @ 10 V | |
| Maximum Gate-Source Voltage | ±20V | |
| Maximum Input Capacitance (Ciss) at Vds | 350 pF @ 15 V | |
| Maximum Power Dissipation | 1.6W (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | SuperSOT™-6 | |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Active
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Quantity
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