FDB86102LZ

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Manufacturer Product Number

FDB86102LZ

Description

POWER FIELD-EFFECT TRANSISTOR, 8

Product Attributes

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Model SeriesPowerTrench®
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C8.3A (Ta), 30A (Tc)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)4.5V, 10V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage24mOhm @ 8.3A, 10V
Maximum Gate Threshold Voltage at Drain Current3V @ 250µA
Maximum Gate Charge (Qg) @ Vgs21 nC @ 10 V
Maximum Gate-Source Voltage±20V
Maximum Input Capacitance (Ciss) at Vds1275 pF @ 50 V
Maximum Power Dissipation3.1W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK (TO-263)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Active

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