FCP104N60

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Manufacturer Product Number

FCP104N60

Description

POWER FIELD-EFFECT TRANSISTOR, 3

Product Attributes

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Model SeriesSuperFET® II
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C37A (Tc)
Maximum Drive Voltage (Rds On), Minimum Drive Voltage (Rds On)10V
Maximum On-State Resistance at Drain Current and Gate-to-Source Voltage104mOhm @ 18.5A, 10V
Maximum Gate Threshold Voltage at Drain Current3.5V @ 250µA
Maximum Gate Charge (Qg) @ Vgs82 nC @ 10 V
Maximum Gate-Source Voltage±20V
Maximum Input Capacitance (Ciss) at Vds4165 pF @ 380 V
Maximum Power Dissipation357W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3
Active

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